4

Contact resistivity of shallow junctions formed by implantation through Pt or PtSi

Année:
1992
Langue:
english
Fichier:
PDF, 566 KB
english, 1992
5

Series resistance of self-aligned silicided source/drain structure

Année:
1993
Langue:
english
Fichier:
PDF, 1.03 MB
english, 1993
6

Dielectric degradation of Pt/SiO2/Si structures during thermal annealing

Année:
1993
Langue:
english
Fichier:
PDF, 2.17 MB
english, 1993
16

Formation of 0.1-μm n+p junction by As+ implantation through Pt or PtSi film

Année:
1990
Langue:
english
Fichier:
PDF, 540 KB
english, 1990
17

Role of fluorine atoms on the thermal stability of the silicide/silicon structure

Année:
1994
Langue:
english
Fichier:
PDF, 699 KB
english, 1994
19

Formation and characterization of a PtSi contacted n+p shallow junction

Année:
1990
Langue:
english
Fichier:
PDF, 1.25 MB
english, 1990
20

Low-temperature reaction of thin-film platinum (≤300 Å) with (100) silicon

Année:
1990
Langue:
english
Fichier:
PDF, 846 KB
english, 1990
21

Via-Filling Capability of Copper Film by CVD

Année:
2003
Langue:
english
Fichier:
PDF, 769 KB
english, 2003